infrared led chip high speed / n side-up gaalas/gaalas 1. material substrate gaalas (p type) removed epitaxial layer gaalas (n/p type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter symbol min typ max unit condition characteristics v f(1) 1.1 v if=10ua v f(2) 1.8 v if=50ma reverse voltag e v r 4 v ir=10ua power p o 24 mw if=50ma p 888 nm if=50ma ? 45 nm if=50ma rise time tr 25 ns fall time tf 20 ns note : power is measured by sorter e/t system with bare chip. 4. mechanical dat a (a) emission area --------------------- 10.8mil x 10.8mil (b) bottom area --------------------- 11.8mil x 11.8mil (c) bonding pad --------------------- 130um (d) chip thickness --------------------- 7mil (e) junction height --------------------- 4.6mil e pi e pi n p n s ide electrode p s ide electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA8930HN f orward voltag e wavelength auk corp. (c) (a) (b) (e) (d)
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